Еквівалентна схема заміщення первинного перетворювача на основі аналога лямбда-діода
Abstract
THE EQUIVALENT CIRCUIT OF SUBSTITUTION AS A PRIMARY
ELEMENT BASED ON LAMBDA DIODE ANALOGUE
I. A. Popova, S. F. Kurashkin
Lambda diode is a semiconductor device consisting of a pair of field-effect transistors with controlled p-n junctions included a defined scheme and implemented on a single chip. Lambda diode has four varieties and has characteristics of a switch that allows its broad application. The disadvantages lambda diode include the inability to adjust or increase the breadth of its natural current-voltage characteristics.
In Tavricheskiy State Agrotechnology University developed analogue lambda diode, consisting of two field-effect transistors, which are complementary pair of field-effect transistors with control p-n junctions.
The aim - to explore the equivalent circuit analog lambda diode to determine the possibility of using it as a transmitter.
Materials and methods. To justify the use of analogue lambda diode as the transmitter will consider the full equivalent circuit analog lambda diode.
Each channel FET and the p-n transition presented in the form of RC units with lumped parameters. Channels submitted differential resistances and interelectrode capacitance, the value of which is determined by the geometry and material FETs. Paddles analogue lambda diode given appropriate supports.
Through support channels are charging capacities closures. This different parts of tanks charged across different support channels depending on the distance of the site of the leak. Through support channels are charging capacities closures. This different parts of tanks charged across different support channels depending on the distance of the site of the leak.
It should be noted that support closures are large enough - 109 ... 1010 ohms, so the differential analog channels support lambda diode does not affect the currents flowing through the FETs closures (due to their extreme low values) and voltage drop their speed.
The results of research. It was an equation of stock voltage-current characteristics lambda diode.
To use analog lambda diode, such as a temperature transmitter include it in the scheme of the bridge.
As thermistors resistors can be used with negative or positive temperature coefficient of resistance (PTC thermistors or) other nonlinear elements, the resistance depends on any physical quantity. Lyamba gate voltage diode depends on the thermistor resistance.
Using the equivalent circuit can calculate the current-voltage characteristics, determine the drain current, voltage lock-out, and select options resistors for use analog lambda diode as transmitter temperature.
An analysis of the equations of the current-voltage characteristics of analog lambda diode can be concluded about its use as a transmitter any physical quantity.
References
Zharkov, V. Y., Popova, I. O. (1999). Zastosuvannja analogu ljambda-dioda dlja diagnostiki ta zahistu elektroobladnannja vid anormal’nih rezhimiv roboti [Lambda-diode analogue application for diagnostics and electrical equipment defense from the abnormal modes]. Kyiv, Ukraine: Scientific announcer of National Agriculture University, 19, 211–215.
Stepanenko I. P. (1977). Osnovy teorii tranzistorov I transistornyh shem [basic theory of transistors and transistor circuits]. Moscow: Energy, 671.
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